| 摘要 |
PROBLEM TO BE SOLVED: To inexpensively form a semiconductor layer on an insulator while the confinement of the width of the semiconductor layer which can be formed on an insulating film is alleviated. SOLUTION: A second semiconductor layer 3 is formed in an epitaxial growth on a first semiconductor layer 2, the dissociation of the engagement of an element which constitutes a first semiconductor layer 2 is performed by irradiating the first semiconductor layer 2 with a laser beam R through a second semiconductor layer 3, after a support 5 is provided in the side wall of a groove 6 formed on the semiconductor substrate 1, a groove 8 into which the second semiconductor layer 3 is exposed is formed, a cavity part 9 is formed between the semiconductor substrate 1 and the second semiconductor layer 3 by bringing etching gas or etchant into contact with the first semiconductor layer 2, the semiconductor substrate 1, the second semiconductor layer 3 and the support 5 are thermally oxidized, thereby forming an oxide film 10 in the cavity part 9 between the semiconductor substrate 1 and the second semiconductor layer 3. COPYRIGHT: (C)2006,JPO&NCIPI
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