| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser annealing method obtaining a large silicon crystal grain without previously forming a polycrystalline silicon film on the whole surface of a substrate with an amorphous silicon film formed on the surface thereof. SOLUTION: The laser anneal method comprises processes of: (a) forming the silicon crystal grain on the substrate with the amorphous silicon film formed on the surface thereof by irradiating pulse laser light; and (b) glowing the silicon crystal grain from the starting point of a region contacted with the silicon crystal grain formed in the process (a), by scanning a continuous wave laser light in a first direction to glow the silicon crystal grain employing the silicon crystal grain as a seed crystal, on the amorphous silicon film in the first direction. COPYRIGHT: (C)2006,JPO&NCIPI
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