Vertical field effect transistor and method for fabricating the same

摘要

A vertical field effect transistor includes: an active region with a bundle of linear structures functioning as a channel region where electric carriers are transported; a lower electrode, connected to the bottom of the active region and functioning as one of source and drain regions; an upper electrode, connected to the top of the active region and functioning as the other of the source and drain regions; a gate electrode for controlling the electric conductivity of at least a portion of the bundle of linear structures included in the active region; and a gate insulating film arranged between the active region and the gate electrode to electrically isolate the gate electrode from the bundle of linear structures. The transistor further includes a dielectric portion between the upper and lower electrodes. The upper electrode is located over the lower electrode with the dielectric portion interposed and includes an overhanging portion that sticks out laterally from over the dielectric portion. The active region is located right under the overhanging portion of the upper electrode.