发明名称 |
Film formation method and apparatus for semiconductor process |
摘要 |
A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.
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申请公布号 |
US2006128161(A1) |
申请公布日期 |
2006.06.15 |
申请号 |
US20050298607 |
申请日期 |
2005.12.12 |
申请人 |
SHIBATA TETSUYA;TAKAHASHI YUTAKA;UMEZAWA KOTA;TOMITA MASAHIKO |
发明人 |
SHIBATA TETSUYA;TAKAHASHI YUTAKA;UMEZAWA KOTA;TOMITA MASAHIKO |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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