DRY ETCHING METHOD AND DRY ETCHING APPARATUS

摘要

A notch is suppressed in dry etching of an object to be treated wherein a layer to be etched made of a silicon material is formed on an etching stop layer. A substrate (12) is provided with the layer (22) to be etched made of the silicon material on the etching stop layer (21). Plasma is generated by introducing SF<SUB>6</SUB>/C<SUB>4</SUB>F<SUB>8</SUB> gas as an etching gas, and a portion of the layer (22) exposed from a resist mask (23) is etched. On side walls of a groove and a hole, a side wall protecting film (24) made of a polymer is formed.