发明名称 |
Split gate type nonvolatile semiconductor memory device, and method of fabricating the same |
摘要 |
A split gate type nonvolatile semiconductor memory device and a method of fabricating a split gate type nonvolatile semiconductor memory device are provided. A gate insulating layer and a floating-gate conductive layer are formed on a semiconductor substrate. A mask layer pattern is formed on the floating-gate conductive layer to define a first opening extending in a first direction. First sacrificial spacers having a predetermined width are formed on both sidewalls corresponding to the mask layer pattern. An inter-gate insulating layer is formed on the floating-gate conductive layer. The first sacrificial spacers are removed, and the floating-gate conductive layer is etched until the gate insulating layer is exposed. A tunneling insulating layer is formed on an exposed portion of the floating-gate conductive layer. A control-gate conductive layer is formed on a surface of the semiconductor substrate. Second sacrificial spacers having predetermined widths are formed on the control-gate conductive layer. A split control gate is formed in the first opening, by etching the exposed control-gate conductive layer. The remaining mask layer pattern and inter-gate insulating layer are etched until the floating-gate conductive layer is exposed. The exposed floating-gate conductive layer is etched to form a split floating gate in the first opening.
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申请公布号 |
US2006128098(A1) |
申请公布日期 |
2006.06.15 |
申请号 |
US20060349402 |
申请日期 |
2006.02.07 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
JEON HEESEOG;YOON SEUNG-BEOM;KIM YONG-TAE;CHOI YONG-SUK |
分类号 |
H01L21/336;H01L21/8247;H01L21/28;H01L27/115;H01L29/423;H01L29/51;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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