发明名称 |
Interconnects having a recessed capping layer and methods of fabricating the same |
摘要 |
Apparatus and methods of fabricating an interconnect having a recessed capping layer. An embodiment of the present invention relates to the fabrication of an interconnect for a microelectronic device which includes a recessed capping layer, which substantially eliminates topography issues present in the known devices and provides improved encapsulation of the interconnect to prevent electromigration of the conductive material thereof.
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申请公布号 |
US2006128144(A1) |
申请公布日期 |
2006.06.15 |
申请号 |
US20040013891 |
申请日期 |
2004.12.15 |
申请人 |
PARK HYUN-MOG;CADIEN KENNETH C |
发明人 |
PARK HYUN-MOG;CADIEN KENNETH C. |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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