| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device in which the front surface of AlGaN layer is formed flat and any damage is not given to two-dimensional gas existing on the AlGaN/GaN interface. <P>SOLUTION: First, a supporting substrate 12 formed of sapphire or silicon carbide is prepared and a buffer layer 14 is deposited on the supporting substrate. Next, a GaN semiconductor substrate 10 is formed by sequentially depositing a GaN layer 16 and a AlGaN layer 20 on the buffer layer under the condition that the supporting substrate and buffer layer are kept within the growth temperature being set to 900°C or higher but to 1,100°C or lower. Thereafter, an AlN layer 30 is formed as a surface protecting film on the upper front surface 28 of the AlGaN layer under the condition that the GaN semiconductor substrate is kept to 500°C or higher but to the temperature equal to the growth temperature or less, following the process to form the GaN semiconductor substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
