| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can reduce layer resistance of gate electrodes by preventing an increase of a junction leak current. SOLUTION: The manufacturing method of a semiconductor device having the gate electrodes containing high melting point metal as material, comprises a step of carrying out initial oxidation of oxidation at a prescribed temperature, for forming an oxide film for covering the side face of the exposed gate electrodes after forming the gate electrodes; and a step of additional oxidation of oxidation at higher temperature than the initial oxidation after the initial oxidation. COPYRIGHT: (C)2006,JPO&NCIPI
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