SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which is improved in ESD withstand voltage through a process of dissipating heat released from it easily, and to provide its manufacturing method. SOLUTION: A gate electrode 8 is provided on a channel 11 formed in a diffusion layer region 3 through the intermediary of a gate insulating film 7. A side wall 9 is formed on each of the side walls of the gate electrode 8. A silicide protection film 10 is formed on the gate electrode 8 and parts of source-drain regions 5 so as to cover the gate electrode 8 and the side walls 9. A metal silicide film 6 is provided on the parts of the source-drain regions 5 where the silicide protection film 10 is not provided so as to adjoin the silicide protection film 10. The silicide protection film 10 is formed of an SiC film and/or an SiOC film. COPYRIGHT: (C)2006,JPO&NCIPI