发明名称 |
Alkali etching liquid for silicon wafer and etching method using same |
摘要 |
An alkali etching liquid for a silicon wafer that includes an aqueous solution of potassium hydroxide, and from 0.1 g/L to 0.5 g/L of diethylene triamine pentaacetic acid. Furthermore, the Fe concentration of the aqueous solution of potassium hydroxide is no more than 50 ppb. An etching method that including a step of etching a silicon wafer with a resistivity of no more than 1Omega.cm using the etching liquid.
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申请公布号 |
US2006124590(A1) |
申请公布日期 |
2006.06.15 |
申请号 |
US20050296254 |
申请日期 |
2005.12.08 |
申请人 |
SUMCO CORPORATION |
发明人 |
NAKASHIMA TAKAHISA;TAKEMURA MAKOTO;HASHIMOTO YASUYUKI |
分类号 |
C09K13/00;B44C1/22;C03C15/00;C25F3/00 |
主分类号 |
C09K13/00 |
代理机构 |
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