发明名称 |
STRAINED SILICON, GATE ENGINEERED FERMI-FETS |
摘要 |
<p>A field effect transistor includes a strained silicon channel in a substrate, source/drain regions in the substrate at opposite ends of the strained silicon channel, a gate insulating layer on the strained silicon channel, and a gate on the gate insulating layer. The doping of the strained silicon channel, the doping of the substrate and/or the depth of the strained silicon channel are configured to produce nearly zero vertical electric field in the gate insulating layer and in the strained silicon channel surface at a threshold voltage of the field effect transistor. Moreover, the gate is configured to provide a gate work function that is close to a mid-bandgap of silicon. Accordingly, a Fermi-FET with a strained silicon channel and a gate layer with a mid-bandgap work function are provided. Related fabrication methods using epitaxial growth also are described.</p> |
申请公布号 |
WO2006062869(A1) |
申请公布日期 |
2006.06.15 |
申请号 |
WO2005US43841 |
申请日期 |
2005.12.06 |
申请人 |
THUNDERBIRD TECHNOLOGIES, INC.;RICHARDS, WILLIAM, R., JR.;SHEN, MIKE, YEN-CHAO |
发明人 |
RICHARDS, WILLIAM, R., JR.;SHEN, MIKE, YEN-CHAO |
分类号 |
H01L21/28;H01L29/10;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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