| 摘要 |
<p>An ESD device includes a low doped well connected to a first contact and a diffusion area connected to a second contact. A substrate between the low doped well and the diffusion area has a dopant polarity that is opposite a dopant polarity of the low doped well and the diffusion area. A distance between the low doped well and the diffusion area determines a triggering voltage of the ESD device. A depletion region is formed between the low doped well and the substrate when a reverse bias voltage is applied to the ESD device. A current discharging path is formed between the first contact and the second contact when the depletion region comes in to contact with the diffusion area. The substrate is biased by a connection to the second contact. Alternatively, an additional diffusion area with the same dopant polarity, connected to a third contact, biases the substrate.</p> |
