| 发明名称 |
PRODUCTION METHOD FOR SILICON EPITAXIAL WAFER, AND SILICON EPITAXIAL WAFER |
| 摘要 |
In a vapor phase growth apparatus including a reaction chamber, a susceptor, a lift pin, an upper heating device, and a lower heating device, a heating ratio between the upper heating ratio and the lower heating ratio is adjusted.
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| 申请公布号 |
EP1670044(A1) |
申请公布日期 |
2006.06.14 |
| 申请号 |
EP20040788176 |
申请日期 |
2004.09.27 |
| 申请人 |
SHIN-ETSU HANDOTAI CO., LTD |
发明人 |
KANAYA, KOICHI;NISHIZAWA, TSUYOSHI |
| 分类号 |
H01L21/205;C23C16/46;C30B25/02;C30B25/12;C30B29/06;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
| 代理机构 |
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