<p>Fabrication of a mono-crystalline emitter using a combination of selective and differential growth modes. The steps include providing a trench (14) formed on a silicon substrate (16) having opposed silicon oxide side walls (12); selectively growing a highly doped mono-crystalline layer (18) on the silicon substrate in the trench; and non-selectively growing a silicon layer (20) over the trench in order to form an amorphous polysilicon layer over the silicon oxide sidewalls.</p>
申请公布号
WO2005071725(A1)
申请公布日期
2005.08.04
申请号
WO2005IB50259
申请日期
2005.01.22
申请人
KONINKLIJKE PHILIPS ELECTRONICS, N.V.;U.S. PHILIPS CORPORATION;MEUNIER-BEILLARD, PHILIPPE;MAGNEE, PETRUS