| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film light emitting device that does not cause the device to be cracked or the like, and heat dissipation is good and is capable of efficiently taking light emitted at an active layer out of the device and a manufacturing method of the same. <P>SOLUTION: A semiconductor layer constructed by sequentially laminating the active layer 105 comprising a nitride semiconductor and an upper clad layer 106 comprising a reverse conducting nitride semiconductor is provided on the upper surface of a lower clad layer 104 comprising one conduction type nitride semiconductor to prepare the thin film light emitting device with thickness of semiconductor layer of 10 μm or less, with which, a good light emitting efficiency-thin film light emitting device where semiconductor layers are not cracked is obtained. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
