FABRICATION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique capable of stably releasing chips from a dicing tape. SOLUTION: A back surface of a semiconductor wafer is ground while sticking a pressure sensitive adhesive tape on a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness (stages P1 to P4) and forcibly oxidizing the back surface of the semiconductor wafer (stage P6). Then, the pressure sensitive adhesive tape stuck on the circuit forming surface of the semiconductor wafer is peeled, and a dicing tape is stuck on the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips (stage P8), and then the back surface of the chip is pressed across the dicing tape, thereby releasing the chips from the dicing tape (stage P10). COPYRIGHT: (C)2005,JPO&NCIPI