发明名称 |
Semiconductor device and its manufacturing method |
摘要 |
A semiconductor device comprises a semiconductor substrate; a trench formed in the semiconductor substrate or in a layer deposited on the semiconductor substrate; a first conductive layer deposited in the trench and having a recess in the top surface thereof; a buried layer which buries the recess of the first conductive layer and which is made of a material having a melting point lower than that of the first conductive layer; and a second conductive layer formed on the buried layer inside the trench and electrically connected to the first conductive layer.
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申请公布号 |
US2005167720(A1) |
申请公布日期 |
2005.08.04 |
申请号 |
US20050068853 |
申请日期 |
2005.03.02 |
申请人 |
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发明人 |
FURUHATA TAKEO;MIZUSHIMA ICHIRO;SEKIHARA AKIKO;KISHIDA MOTOYA;HARADA TSUBASA;NAKAO TAKASHI |
分类号 |
H01L23/52;H01L21/3205;H01L21/8234;H01L21/8242;H01L21/8244;H01L27/108;H01L31/119;(IPC1-7):H01L21/824 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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