Method for manufacturing MOSFET having elevated source/drain,申请号KR19990007504-传众专利搜索

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发明名称	Method for manufacturing MOSFET having elevated source/drain
摘要
申请公布号	KR100505630(B1)	申请公布日期	2005.08.04
申请号	KR19990007504	申请日期	1999.03.08
申请人		发明人
分类号	H01L21/336;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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