| 摘要 |
PROBLEM TO BE SOLVED: To decrease threshold voltage of a Schottky source/drain transistor wherein a gate electrode in contact with a source/drain area and a gate insulating film is formed of silicide. SOLUTION: The semiconductor device is provided with a gate insulating film 14 made of ZrO<SB>2</SB>that is formed on a p-type silicon layer 23, a gate electrode 25 that is formed the gate insulating film 14 and is formed of Er silicide whose work function is closer to the conduction band side than a nearly central value of a band gap of a semiconductor layer, and a source/drain area 27 that is formed as to pinch the p-type silicon layer 23 and is formed of Er silicide. COPYRIGHT: (C)2005,JPO&NCIPI
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