MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND SUBSTRATE TREATMENT EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To reduce a thermal budget, and to improve a productivity and characteristics. SOLUTION: A continuous treatment by continuous treatment equipment has a step S1 carrying a wafer from a carrying-in chamber 20 to an MMT device 70 through a negative-pressure shifting chamber 10, a film-formation step S2 for an interface antioxidizing film forming a plasma nitride film on the surface of the wafer by the MMT device 70, and the step S3 carrying the wafer to which the plasma nitride film is formed from the MMT device 70 to a thermal CVD device 200 through the negative-pressure shifting chamber 10. The continuous treatment further has the film formation step S4 for a metallic oxide film forming a tantalum oxide film on the wafer to which the plasma nitride film is formed by the thermal CVD device 200, and a carrying step S5 to the MMT device 70 at two times carrying the wafer to which the tantalum oxide film is formed from the thermal CVD device 200 to the MMT device 70. The continuous treatment further has a film-quality improving step S6 for the metallic oxide film plasma-oxidizing the tantalum oxide film formed on the wafer by the MMT device 70. COPYRIGHT: (C)2005,JPO&NCIPI