PHOTOELECTRIC CONVERTER, METHOD OF MANUFUCTURING THE SAME, AND SOLID STATE IMAGING DEVICE

摘要

PROBLEM TO BE SOLVED: To secure blooming durability and allow a reading voltage to be reduced by adjusting an impurity concentration in a read-out region between a photoelectric conversion region and a charge transfer region. SOLUTION: The photoelectric converter 1 comprises a photoelectric conversion region 21 and a charge transfer region 23 apart therefrom in a first conductivity type first region 12 formed on a semiconductor substrate 11. In the first conductivity type first region 12 between the photoelectric conversion region 21 and the charge transfer region 23, the second region 27 of the same conductivity type as the first region 12 is formed in a region not containing the semiconductor substrate 11 interface and covers a depth between the maximum potential depth of the photoelectric conversion region 21 from the interface while no light is incident and the potential maximum depth of the charge transfer region 23 from the interface. The first region 12 above the second region 27 has lower specified resistance than that of the second region 27 or a higher impurity concentration than that of the second region 27. COPYRIGHT: (C)2005,JPO&NCIPI