SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of measuring the temperature of a substrate heated by radiating flashing light from a flash lamp. SOLUTION: This substrate processing apparatus comprises a heat treatment part for lighting a xenon flash lamp to perform flash heating, and an alignment part for turning the direction of a semiconductor wafer to a fixed direction before heating. The alignment part includes a reflectance measuring mechanism to measure the reflectance of the surface of the semiconductor wafer of a processing object prior to carrying into the heat treatment part. When the flash heating of the semiconductor wafer is performed in the heat treatment part, the emitted light from the wafer surface by heat radiation is collected to measure the radiant intensity thereof. The instantaneous highest temperature of the semiconductor wafer is calculated from the reflectance measured before the heat treatment and the radiant intensity measured in the flash heating. COPYRIGHT: (C)2005,JPO&NCIPI