| 摘要 |
PROBLEM TO BE SOLVED: To provide a method enabling melt-growth of a gallium-containing nitride single crystal by using inexpensive equipment, in which there is little danger, especially a method enabling the melt-growth at normal pressure. SOLUTION: In the method for growing the gallium-containing nitride single crystal on a seed crystal substrate by a reaction of molten gallium, held in a vessel in a crystal growth chamber, with nitrogen gas, a eutectic alloy melt of gallium (Ga) is formed, then the seed crystal substrate, on which a mesh-like, striped, or perforated polka dot-like catalyst metal is adhered, is dipped in the eutectic alloy melt, and a gallium-containing nitride single crystal phase is grown on the surface of the seed crystal substrate by Grapho-epitaxy method comprising reacting nitrogen dissolving in the eutectic alloy melt from a space part including a nitrogen supplying source on the surface of the melt, and gallium being one of eutectic alloy components on the surface of the seed crystal substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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