| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method which can obtain a metal film having a few micro-voids and a coarse crystal particle and a method for manufacturing a semiconductor device to obtain the semiconductor device which is hard to cause a wiring failure. SOLUTION: On a wafer W, an interlayer insulating film 10 provided with a via hole 10a and a wiring trench 10b is formed. A barrier metal film 11 is formed on the interlayer insulating film 10, and a wiring film 13 is formed on the barrier metal film 11 so as to be buried in a via hole 10a and a wiring trench 10a. In this state, the wiring film 13 is elastically deformed, a first heat treatment is performed in a temperature range where a compression stress works, and thereafter, a second heat treatment is performed in a temperature range where the wiring film 13 is plastically deformed. COPYRIGHT: (C)2005,JPO&NCIPI
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