| 摘要 |
PURPOSE:To monitor the flatness of a sample surface without resulting in the deterioration in crystallizability and damage in a crystal by irradiating the sample surface during crystal growth or dry etching by electron beams at specific speed and detecting the intensity of inelastic scattered beams. CONSTITUTION:When crystal growth is conducted on a crystal substrate 11 by substances 18-20 each evaporated or discharged from an electron-beam heating evaporating cell 12, a heating evaporating cell 13 and a nozzle 14 or dry etching is performed by a substance 27 discharged from a nozzle 21, one part of the crystal substrate 11 is irradiated by electron beams 23 at 5-1keV from an electron gun 22 in an electronic energy analyzer 16, and inelastic- scattered and returned electron beams 24 are energy-analyzed by the analyzer 16. Only the intensity of a signal in which dangling bonds are concerned is extracted, and intensity variation is recorded on a recorder 26. Accordingly, the change of the flatness of the surface of the substrate 11 can be monitored, and a crystal growth rate or a crystal-surface etching rate can be determined when intensity is monitored continuously.
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