MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To enable a flat junction to be formed regardless of deep diffusion exceeding 10mum without separating a group V element compound of zinc on the surface by a method wherein the surface of specified semiconductor is coated with a zinc oxide skin film containing specified amount of silicon oxide and then zinc is diffused while impressing the peripheral part with zinc and group V element pressure. CONSTITUTION:The surface of N type III-V compound semiconductor 1 is coated with zinc oxide skin film containing silicon oxide exceeding 10% by sputtering process and then the substrate is placed in an enclosure tube together with group V element compound 3 of zinc to be diffused for specified time at specified temperature until the depth thereof attains to specified value. The zinc vapor in the enclosure tube, after diffusing the coating film, reaches the surface of specified compound semiconduc tor substrate further to be diffused in the compound semiconductor substrate. At this time, the surface concentration of zinc is kept constant resultantly flattening the junction surface formed by the diffusion. When the zinc vapor is diffused down to the specified depth to be cooled down and then the skin film is removed in the later process after opening the enclosure tube, the V group element compound 3 of zinc formed on the skin film can be removed simultaneously without disturbing the formation of an ohmic electrode.