| 摘要 |
PURPOSE:To obtain the titled body having a very small dark attenuation of the electrostatic charge potential by constituting a photoconductive layer from an n-type semiconductor which contains an amorphous silicon contg. hydrogen atom as a main component, and phosphorous atom as an impurity, and by constituting a surface layer from a dried curing material of a solution contg. at least one kind of an org. stannic compd. CONSTITUTION:The photoconductive layer composed of the amorphous silicon is coated on a conductive substrate, and the surface layer is laminated on the photoconductive layer. The dried curing material of the solution contg. at least one kind of the org. stannic compd. is used as the surface layer. The n-type semiconductor comprising the amorphous silicon as the main component, and phosphorous atom as the impurity is used as the photoconductive layer. The further preferable org. stannic compd. is a stannic complex and a stannic alkoxide. At the time of obtaining the titled body, one or >=2 kinds of the org. stannic compds. are dissolved a suitable solvent, and the obtd. solution is coated on the substrate. Thus, the high mechanical strength, the high durability, the high heat-resisting property and the high photosensitivity of the titled body are maintained, and the high electric charge holding power of the titled body is obtd., without being affected by the surroundings of an outside and the number of using, thereby obtaining the picture image having excellent quality. |
