| 摘要 |
PURPOSE:To avoid discontinuity of a wiring caused by the difference between heat expansion coefficients by a method wherein wiring electrode films are provided above and below an interlayer film and films which have a heat expansion coefficient between the heat expansion coefficient of the interlayer film and the heat expansion coefficient of the wiring electrode and have a low conductivity are provided between the interlayer film and the upper and lower wiring electrodes. CONSTITUTION:Newly formed films (heat expansion relief layers) 2 and 4 are provided. As the relief layer, for instance, a PSG film can be employed. If PSG films with phosphorus concentration of about 3-5 wt.% are formed between a plasma silicon nitride film which is an interlayer film 3 and aluminum films which are wiring electrodes 1 and 5 provided above and below the interlayer film 3, even after a heat treatment applied in a semiconductor manufacturing process thereafter is carried out, the discontinuity defects of the Al films which are wiring electrode films are avoided.
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