| 摘要 |
PURPOSE:To realize with facility a microstructure at low temperature by a method wherein a transition metal silicide layer is formed to establish source.drain regions. CONSTITUTION:A polycrystalline silicon thin film to serve as an activation layer 2 is formed on a glass substrate 1, the activation layer 2 is subjeted to patterning, and then a silicon oxide film to serve as a gate insulating film 3 is deposited. On its top, a polycrystalline silicon film is deposited to serve as a gate electrode 4, subjected to patterning, and the gate insulating film 3 is subjected to patterning with the gate electrode 4 serving as a mask. A chrome thin film 6 is deposited, and subjected to thermal treatment for the formation of a chrome silicide layer 7 to serve as a contact forming layer along the interface between the silicon and chrome thin films. The chrome thin film 6 is removed, a silicon oxide film is formed to serve as an insulating layer 8, a contact hole (h) is provided, and then an electrode wiring pattern 9 is formed. |
