发明名称 MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent a pollutant from outdiffusing from an interlayer insulating films as well as the pollusion in a dielectric film forming furnace from occuring by a method wherein, after forming the interlayer insulating films, the high temperature treatment to form dielectric film is eliminated. CONSTITUTION:A dielectric film 10 is formed on the first electrode 5B to form interlayer insulating films 8B covering the dielectric film 10 while the interlayer insulating films 8B on the dielectric film 10 are removed to make an opening 11B. At this time, the dielectric film 10 is formed before the interlayer insulating films 8B and after forming the interlayer insulating films 8B, the high temperature treatment to form the dielectric film 10 can be eliminated. Through these procedures, phosphorus (pollutant) can be prevented from outdiffusing from the interlayer insulating films 8B further preventing the pollusion in a furnace from occuring.
申请公布号 JPS62274763(A) 申请公布日期 1987.11.28
申请号 JP19860117392 申请日期 1986.05.23
申请人 HITACHI LTD;HITACHI MICRO COMPUT ENG LTD;HITACHI DEVICE ENG CO LTD 发明人 MEGURO HIDEO;HASHIBA SOICHIRO;CHIBA TOSHIYUKI;KOMURO MASAMICHI;OTSUKA NOBUTAKA
分类号 H01L27/04;H01L21/822 主分类号 H01L27/04
代理机构 代理人
主权项
地址