| 摘要 |
PURPOSE:To realize easy and reliable detection of defects even in an extremely fine pattern, by forming a defect detecting pattern having the same configuration as a predetermined pattern in the peripheral space of a photomask and exposing it with an amount of light lower than an appropriate exposure. CONSTITUTION:Predetermined patterns 2 are formed lengthwise and crosswise in the central portion of the principal face of a mask substrate 1 for forming a circuit functioning element. A defect detecting pattern 3 is formed in the peripheral space of the principal face of the substrate at a distance from the group of the predetermined patterns 2. The defect detecting pattern 3 is formed in the following manner: first, an original pattern formed in a reticle is exposed by the step-and-repeat technique to form the group of the predetermined patterns 2, and then the same pattern as the predetermined pattern 2 is exposed with an amount of light corresponding to about 0.8 times as large as the exposure of the predetermined pattern 2. The size of the defect detecting pattern 3 thus formed is generally decreased in comparison with that of the predetermined pattern 2, while a defective portion 13 in a bridge is formed in an enlarged and exaggerated manner. Accordingly, provision of such defect detecting pattern 3 enables any defect in the pattern to be detected reliably even with a conventional detecting apparatus. |
