| 摘要 |
In an integrated semiconductor device comprising vertical p-n-p and n-p-n transistors (20, 21) and having two buried-layer zones (2-1, 3-1, 3-2 or 30, 31) for p-n-p transistors, the buried-layer zones (3-1, 3-2, 30, 31) which form the collectors are divided into two regions doped to different degrees, of which the more lightly doped region forms the collectors of the p-n-p transistors (20) and the other, more highly doped region forms insulation zones and collector trenches. <IMAGE>
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