SELF-ALIGNED METAL SILICIDE PROCESS FOR INTEGRATED CIRCUITS HAVING SELF-ALIGNED POLYCRYSTALLINE SILICON ELECTRODES,申请号EP19850401539-传众专利搜索

发明名称	SELF-ALIGNED METAL SILICIDE PROCESS FOR INTEGRATED CIRCUITS HAVING SELF-ALIGNED POLYCRYSTALLINE SILICON ELECTRODES
摘要
申请公布号	EP0173611(A3)	申请公布日期	1988.01.20
申请号	EP19850401539	申请日期	1985.07.26
申请人	FAIRCHILD CAMERA & INSTRUMENT CORPORATION	发明人	KOH, YUN BAI;CHIEN, FRANK;VORA, MADHU
分类号	H01L27/04;H01L21/02;H01L21/225;H01L21/28;H01L21/285;H01L21/331;H01L21/822;H01L29/04;H01L29/73;H01L29/732;(IPC1-7):H01L21/285	主分类号	H01L27/04
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