| 摘要 |
PURPOSE:To improve the photoconductive characteristic and environmental resistance of a photosensitive body by forming a photoconductive layer by alternately laminating an amorphous layer composed of Si as a base material and semiconductor layer which contains C and is micro-crystallized at a specific layer thickness. CONSTITUTION:A barrier layer 22 consisting of a-Si:H. etc., the photoconductive layer consisting of a photoconductive layer 23 or an electric charge transfer layer 5 and an electric charge generating layer 26 and a surface layer 24 are successively formed on a conductive substrate 21. The layers 23, 26 are constituted by alternately laminating the thin layers 31, 32 consisting of the amorphous layer compound of the Si as the base material (e.g.: a-Si: layer) and the semiconductor layer which contains C and part or the whole of which is micro- crystallized (e.g.: muc-SiC:H layer). The thickness of the layers layers 31, 32 is specified to 30-500Angstrom . The photosensitive body which gas high sensitively over the region from visible light to near IR light, has high traveling property of carriers, high resistance and excellent electric charge characteristic is obtd. according to the above-mentioned constitution. |
