| 摘要 |
PURPOSE:To achieve a higher sensitivity with the element temperature raised up to about 400 deg.C, by arranging two electrodes on and beneath an oxide semiconductor film as source and drain and gate electrodes on both sides of an upper electrode to form an FET construction in which current flows vertically. CONSTITUTION:A band-shaped drain electrode 4 is provided on an insulating substrate 8 comprising aluminum oxide, a ZnO layer 6 is laminated at the thickness of 1-20mum thereon as an oxide semiconductor film ohmic connected to the drain electrode 4 and an insulation layer 2 made of SiO2 is laminated on the ZnO layer 6 at the thickness of 10-100nm. Then, a band-shaped source electrode 3 is provided on the insulation layer 2 almost parallel with the drain electrode 4 and a gate electrode film 1 comprising one kind of metal selected from among Pd, Pt, Rh, Ir, Ru, Os, Au and Re is formed on both sides of the source electrode 3 at the thickness of 5-100nm. A heater 9 for heating elements is provided beneath the insulating substrate 8 to heat semiconductor elements.
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