| 摘要 |
PURPOSE:To evaluate the dynamic property of a semiconductor wafer in noncontact manner by disposing electrodes at an interval on the wafer, applying a high frequency voltage between the wafer and the electrodes, and measuring the frequency characteristics of an impedance generated therebetween. CONSTITUTION:A wafer 3 is placed on a conductive cylindrical base 1, stationary electrodes 2 are opposed at an interval at the lower side of the wafer 3, and a predetermined DC bias voltage and a high frequency voltage are applied to terminals 4, 5 provided on the lower surfaces of the base 1 and the electrodes 2. Thus, the impedance frequency characteristics between the wafer and opposed electrodes are measured to evaluate the characteristics of the wafer corresponding to the variation in the resonance frequency (f) and the sharpness Q of the resonance, i.e., precipitated oxygen amount between lattices, the thickness of the wafer, and the distortion of the rear surface. Accordingly, the evaluation becomes simply, and a plurality of wafers can be continuously measured.
|
