| 摘要 |
PURPOSE:To enhance wiring density without a reduction in wire width by a method wherein a third conducting layer is lifted off together with a resist pattern and, in a gap between second conductive layer wires, a third conductive wire is formed, which runs over an even-numbered hole and extends in line with the wires of the second conductive layer. CONSTITUTION:A third Al layer 10 to serve as a third conductive layer is formed on a substrate by, for example, evaporation which is a method rather poor in providing a cover on a step. This is formed, thanks to disconnection at a step between resist patterns 6a, 6b and an insulating film 3. The resist patterns 6a, 6c are dissolved in a resist solvent and, simultaneously, the third Al layer 10 is lifted off from the resist patterns 6a, 6c. In a gap between first and third Al wires 9a and 9c built of a second Al layer, an even-numbered Al wire or a second Al wire 9b is formed of the third Al layer 10, extends in line with the first and third Al wires 9a and 9c, and contacts a first Al layer 8b in a contact window. In this way, wiring density may be enhanced without a reduction in wire width.
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