发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To reduce power consumption in a memory, by connecting MOS capacitors between each word line and signal line, and a column decoder output line and the signal line. CONSTITUTION:The MOS capacitors Ci,... are connected between each of the word lines WLi, WLj,... and a common signal line PX, or between each of the output lines Lc,... of the column decoders CDi,... and a common signal line CX. And a selective word line or a column gate output line is pushed up by rising the signal line PX or CX after the rising of the word line or the column decoder output line. In such way, it is possible to lower the output voltage of a word/column decoder, and it is not necessary to connect a capacitor with a large capacitance for pushing up to the output line of a word driver, etc., and to reduce the power consumption in the memory.
申请公布号 JPS63152089(A) 申请公布日期 1988.06.24
申请号 JP19860299357 申请日期 1986.12.16
申请人 FUJITSU LTD 发明人 TATEMATSU TAKEO
分类号 G11C11/407;G11C11/34 主分类号 G11C11/407
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