| 摘要 |
PURPOSE:To obtain an image sensor which has excellent characteristics and a simple construction and can be manufactured by a simple process by a method wherein a transparent Schottky electrode, an a-Si film, a Schottky electrode which has a larger work function than the former Schottky electrode and a protective film are built up on a transparent substrate in this order. CONSTITUTION:First, after an SnO2 film which is difficult to have reaction with a-Si is formed on a glass substrate 4 as a transparent Schottky electrode 1a, an a-Si film 3 is formed on it and, further, an ITO film or a Pt film is formed on the a-Si film 3 as a Schottky electrode 2a which has a larger work function than the SnO2 electrode 1a. Finally, an organic film or an inorganic film is formed as a final protective film 5. Light enters from the transparent substrate 4 side and a bright/dark current is induced by the Schottky effect between the transparent electrode 1a and the a-Si film 3. However, as the Schottky effect between the a-Si film 3 and the Schottky electrode 2a with the larger work function is larger, the required bright/dark current can be obtained mainly by the Schottky electrode 2a. As for a layer structure, it is sufficient to build up the Schottky electrode 2a with the large work function only. Therefore, the layer structure is simple and the image sensor can be manufactured by a simple process. |
