发明名称 SEMICONDUCTOR SENSOR
摘要 PURPOSE:To enhance detection accuracy, by providing a cover body having venting holes provided over the whole thereof to a substrate on the element holding side thereof and electrically connecting the substrate and the cover body to the source electrode and lead terminal of FET to electromagnetically shield an element. CONSTITUTION:The FET sensor element 1 fixed to a substrate 2 is formed by providing a high resistant temp. detector 8 on an FET element 7 and further forming a gate electrode 9 thereon by vapor deposition using gold. Thereafter, a source 10, a drain 11, a gate electrode part 12 and the lead terminals 3a, 3b, 3c corresponding thereto are connected by lead wires 13a, 13b, 13c. Next, an 100-mesh net made of stainless steel is formed into a cylindrical shape to be used as a cover body 5. This cover body 5 is mounted on the substrate 2 so as to be caulked by an aluminum band 6. At this time, the cover body 5 can be electrically connected to the side surface of the substrate 2 by caulking and, when the lead terminal 3a is earthed, the electrical shielding of the element 1 is achieved.
申请公布号 JPS63158444(A) 申请公布日期 1988.07.01
申请号 JP19860305187 申请日期 1986.12.23
申请人 TOSHIBA CORP 发明人 UNO SHIGEKI;MURAKAMI KOJI;FUKUDA NORISUKE
分类号 G01N27/00 主分类号 G01N27/00
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