| 摘要 |
PURPOSE:To equalize size by forming an opening section to an insulating oxide film on a substrate including an operating region in a field-effect type transistor, shaping a first gate electrode so as to be partially exposed to the opening section and forming a second gate electrode so as to coat the exposed section of the first gate electrode. CONSTITUTION:Si<+> ions are implanted onto a semi-insulating GaAs substrate 1, using a resist as a mask to shape an active region 2. SiO2 3 is deposited onto the whole surface, Si3N4 4 is deposited, sections except a section as a gate are coated with a resist 5, and Si3N4 and SiO2 3 are etched in an anisotropic manner. The resist is removed, WSi 6 is deposited onto the whole surface, Al 7 is evaporated onto the whole surface, and Al 7 except the gate section is gotten rid of through oblique etching. WSi 6 and Si3N4 4 are etched through sputtering etching employing CF4 gas to expose the upper section of WSi 6, and Al 7 is taken off. W 8 is grown through a depresurized CVD method using WF6 gas and H2 gas. The insulating oxide film 3 is removed Si<+> ions are implanted, employing the gate as a mask, and annealed, and AuGe 9 is evaporated.
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