| 摘要 |
PURPOSE:To obtain a single crystal production device capable of efficiently transferring heat to the central part of a crucible, by setting a heater to heat and to melt raw aqueous melt in the crucible below the bottom of the crucible and laying an electric current circuit for magnetic field application, having an circuit part in parallel with the central axis direction of a furnace, at the side of the crystal pulling up furnace. CONSTITUTION:A heater 25 is set below the bottom of a crucible 24 and single crystal 26 is pulled up from raw material melt 23 while feeding a raw material 30. In the pulling up, a rod of the raw material 30 (Si polycrystal) is melted from the top of the crucible 24 by high-frequency induction heating and continuously fed to the crucible 24. Then, Si is fed to the crucible 24, the heater 25 set below the crucible is heated by sending electric current and the single crystal 26 is pulled up while heating and keeping the melt 23 warm. Further an electric current is sent to an electric current circuit 31 for magnetic field application laid in the periphery of a furnace 21 and magnetic field in the horizontal direction is impressed to the melt 23. Consequently, agitating flow by heat convection in the melt 23 is suppressed and Si single crystal having extremely excellent quality, drastically reduced formation of defect and very slight degree of impurity segregation is obtained.
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