| 摘要 |
<p>PURPOSE:To attain high speed write by giving a low potential to the gate of a pull-up FET only at write to the bit line so as to limit a pull-up current. CONSTITUTION:A write control signal, the inverse of C is inputted to the gate of a pull-up FET (T1, T2) in a GaAs memory. The signal represents a NOR logic between a Y decoder and the AND of a write enable signal WE. In the case of the write to a column Y, the FET (T1, T2) is turned off to suppress the pull-up current and information is written accurately at high speed onto bit lines B, and the inverse of B. In the case of write to other column, the pull-up FF is turned on and the bit line amplitude is kept small, then the quick readout is attained at the next readout cycle. Similarly, a large pull-up FET is turned on at readout to supply a large pull-up current for high speed readout.</p> |
