| 发明名称 |
I.C.CHIP PROTECTION PROCESS |
| 摘要 |
The IC is coated with a compound of epoxy resin of 100% and hardener of 2-5% under temperature of 90-130≦̸C. Methyl amine, ethyl amine, t- buthyl amine, diethyl amine or ethylene amine is used as the hardener.
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| 申请公布号 |
KR880001538(B1) |
申请公布日期 |
1988.08.19 |
| 申请号 |
KR19850010125 |
申请日期 |
1985.12.31 |
| 申请人 |
WOOJIN PRECISION CO., LTD. |
发明人 |
KIM SUNG-WAN |
| 分类号 |
H01L23/02;(IPC1-7):H01L23/02 |
主分类号 |
H01L23/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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