| 摘要 |
PURPOSE:To simplify a process, and to ensure connection to a diffusion region by introducing silicon ions into a high melting-point metal through an ion implantation technique in order to form the wiring of a metallic silicide layer onto a field insulating film. CONSTITUTION:Insulating films 4 are formed onto the surfaces of semiconductor element regions, which are partitioned by field insulating films 2 and to which N-type diffusion regions 3 are shaped, in the surface of a P-type silicon substrate 1, opening sections are formed to the insulating films 4, a titanium film 5 is deposited onto the whole surface, a photo-resist film 6 is shaped onto the film 5, and masks for forming wirings are formed through selective etching. Silicon ions 7 are implanted to the titanium film 5, using the photoresist film 6 as a mask. The photo-resist film 6 is removed, the titanium film 5 to which silicon ions 7 are implanted is reacted with silicon through heat treatment in a nitrogen atmosphere to form a titanium silicide layer 8, and the titanium film 5 not reacted is gotten rid of through etching in the mixed solution of aqueous ammonia and hydrogen peroxide water, and wirings are shaped.
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