发明名称 RESONANCE TUNNEL TRANSISTOR
摘要 RESONANT-TUNNELING THREE-TERMINAL UNIPOLAR DEVICE Negative conductance as well as negative transconductance are realized in a unipolar three-terminal device which includes an ohmically contacted quantum well structure between a source contact and a drain contact on a channellayer. Contemplated primary device use is in switching and microwave applications.
申请公布号 JPS63226961(A) 申请公布日期 1988.09.21
申请号 JP19880038802 申请日期 1988.02.23
申请人 AMERICAN TELEPH & TELEGR CO <ATT> 发明人 FUABIO BERUTORAMU;FUEDERIKO KAPASO;ARUFURETSUDO II CHIYO;SUZANTA SEN
分类号 H01L29/68;H01L29/06;H01L29/201;H01L29/80 主分类号 H01L29/68
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