发明名称 |
RESONANCE TUNNEL TRANSISTOR |
摘要 |
RESONANT-TUNNELING THREE-TERMINAL UNIPOLAR DEVICE Negative conductance as well as negative transconductance are realized in a unipolar three-terminal device which includes an ohmically contacted quantum well structure between a source contact and a drain contact on a channellayer. Contemplated primary device use is in switching and microwave applications. |
申请公布号 |
JPS63226961(A) |
申请公布日期 |
1988.09.21 |
申请号 |
JP19880038802 |
申请日期 |
1988.02.23 |
申请人 |
AMERICAN TELEPH & TELEGR CO <ATT> |
发明人 |
FUABIO BERUTORAMU;FUEDERIKO KAPASO;ARUFURETSUDO II CHIYO;SUZANTA SEN |
分类号 |
H01L29/68;H01L29/06;H01L29/201;H01L29/80 |
主分类号 |
H01L29/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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