| 摘要 |
PURPOSE:To prevent the increase of the leakage current due to the growth of modified layers by forming a low-doped p-type conductive semiconductor layer in the plane in contact with high-resistance layers. CONSTITUTION:On both sides of an active layer 4 on a semiconductor substrate 1, current block layer structures of a high-resistance semiconductor layer 7 are formed, and between the high-resistance semiconductor layers 7 and the active layer 4 and the substrate 1, a conductive semiconductor layer 6 is formed to which an impurity was doped with a low concentration. The low-doped semiconductor layer 6 is formed of, for instance, a relatively low concentration p-InP layer, so n-type transformed layers 8 parasitically growing when the high-resistance layers 7 grow do not reach the n-type semiconductor substrate 1, whereby the leakage current does not increase to a high output level.
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