| 摘要 |
PURPOSE:To form a thin and uniform metallized layer minimal in the occurrence of thermal stress, by forming the atmosphere around nitride ceramics whose surface is activated by exposure under high-temp. vacuum into the vapor atmosphere of a metal to be a metallizing layer. CONSTITUTION:At the time of using Si3N4 as nitride ceramics, this Si3N4 is exposed under high-temp. vacuum to activate the surface of the above Si3N4. Simultaneously, by forming the atmosphere around the Si3N4 into the atmosphere of vapor of the metal to be a metallizing layer, Si produced by the activation of the Si3N4 surface is allowed to react with the metallic vapor so as to be formed into a metallized layer. That is, since the metallic vapor is allowed to react directly with Si, the uniform and extremely thin metallized layer can be formed by a simplified process. Moreover, by this method, the occurrence of high thermal stress in the course of cooling from the metallizing temp. to room temp. can be inhibited and the cracking of Si3N4 can also be prevented. Further, as to the above-mentioned high-temp. vacuum conditions, temp. and the degree of vacuum are regulated, e.g., to >=1,100 deg.C and >1X10<-4>Torr, respectively.
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