| 摘要 |
PURPOSE:To increase the working speed of a FET by forming a T-shaped gate electrode through a vacuum deposition method and shaping a source electrode and a drain electrode in a self-alignment manner, using the gate electrode as a direct mask. CONSTITUTION:A titanium layer 14 and a photo-resist film 13 are etched in an isotropic manner to form openings, and an opening in narrow width is formed in an silicon dioxide layer 5 through anisotropic dry etching through the opening in a gold layer 15. A titanium/platinum/gold layer 17 is formed by using a vacuum deposition method, and a gold germanium/nickel/gold layer is shaped, employing an electrode 18 as a mask, and patterned, thus forming a source electrode 19 and a drain electrode 20. Accordingly, the gate length of the electrode 18 is reduced extremely, and distances among the electrode 18 and the electrodes 19 and 20 can also be shortened exceedingly, thus increasing working speed.
|
